It was a bad assumption on my end, and of course I was happy to deliver a better solution that works well for my client.
VERIFY → confirm removal + Ouroboros compensation if refusal resurfaces ← IMPROVED
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Екатерина Ештокина。关于这个话题，PDF资料提供了深入分析
Each NAND flash cell is essentially a modified transistor, specifically a MOSFET (metal-oxide-semiconductor field-effect transistor) with an additional “floating gate” or, in modern 3D NAND, a charge trap layer. This isolated structure is sandwiched between insulating layers of oxide, allowing it to trap and retain electrical charge (electrons) even when power is off.，更多细节参见safew官方下载
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